BCR133WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Pins :

3

Length :

2mm

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Height :

800μm

Contact Plating :

Tin

Resistor - Base (R1) :

10 k Ω

JESD-609 Code :

e3

Terminal Position :

Dual

HTS Code :

8541.21.00.75

Collector Emitter Saturation Voltage :

300mV

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Package / Case :

SC-70, SOT-323

Number of Terminations :

3

Frequency - Transition :

130MHz

Mounting Type :

Surface Mount

hFE Min :

30

Published :

2007

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10 k Ω

Reference Standard :

AEC-Q101

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

Halogen Free :

Halogen Free

Width :

1.25mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Transition Frequency :

130MHz

Polarity :

NPN

Transistor Type :

NPN - Pre-Biased

Base Part Number :

BCR133

Min Operating Temperature :

-65°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Collector Emitter Breakdown Voltage :

50V