BC847,215
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- Mfr.Part #
- BC847,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO236AB
- Stock
- 1,618
- In Stock ：
- 1,618
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Ambient Temperature Range High :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 250mW
- Max Power Dissipation :
- 250mW
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Length :
- 3mm
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Termination :
- SMD/SMT
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 100MHz
- Width :
- 1.4mm
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BC847
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- hFE Min :
- 110
- JESD-609 Code :
- e3
- Height :
- 1.1mm
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 200mV
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847,215
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847,215 Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,215 Applications
There are a lot of Nexperia USA Inc.
BC847,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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