AUIRLZ44Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 31A, 10V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

204A

REACH SVHC :

No SVHC

Threshold Voltage :

1V

Turn-Off Delay Time :

25 ns

Turn On Delay Time :

14 ns

Height :

16.51mm

Mounting Type :

Through Hole

Width :

4.83mm

Mount :

Through Hole

Published :

2011

Packaging :

Tube

Series :

HEXFET®

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation :

80W

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Gate to Source Voltage (Vgs) :

16V

Length :

10.67mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

160ns

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Factory Lead Time :

16 Weeks

Avalanche Energy Rating (Eas) :

78 mJ

Package / Case :

TO-220-3

Case Connection :

DRAIN

Fall Time (Typ) :

42 ns

Vgs (Max) :

±16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

80W Tc

Continuous Drain Current (ID) :

51A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

55V

Additional Feature :

ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V