AUIRLR2703TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Turn On Delay Time :

8.5 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

200 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

45W

Terminal Form :

Gull wing

Radiation Hardening :

No

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

45W Tc

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

96A

Turn-Off Delay Time :

12 ns

Transistor Application :

SWITCHING

Contact Plating :

Tin

Number of Elements :

1

Continuous Drain Current (ID) :

23A

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

20A

Rise Time :

140ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 14A, 10V

Number of Terminations :

2

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Number of Pins :

3

Series :

HEXFET®

Element Configuration :

Single

JESD-609 Code :

e3

Fall Time (Typ) :

20 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.045Ohm