AUIRFS8408

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.67mm

Continuous Drain Current (ID) :

195A

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

10820pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

324nC @ 10V

Mount :

Surface Mount

Power Dissipation-Max :

294W Tc

Packaging :

Tube

Radiation Hardening :

No

Vgs (Max) :

±20V

Power Dissipation :

294W

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

40V

Nominal Vgs :

3 V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

REACH SVHC :

No SVHC

Number of Pins :

3

Series :

HEXFET®

Height :

4.83mm

Threshold Voltage :

3V

Rise Time :

202ns

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Channels :

1

Published :

2011

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

119 ns

Base Part Number :

IRFS8408

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Turn On Delay Time :

29 ns

Width :

9.65mm

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn-Off Delay Time :

108 ns

Gate to Source Voltage (Vgs) :

20V