AUIRFR5305TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

14 ns

Series :

Automotive, AEC-Q101, HEXFET®

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

110W Tc

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

39 ns

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Power Dissipation :

110W

Avalanche Energy Rating (Eas) :

280 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Published :

2014

Radiation Hardening :

No

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-55V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.065Ohm

Rise Time :

66ns

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Vgs (Max) :

±20V

FET Type :

P-Channel

Continuous Drain Current (ID) :

31A

Fall Time (Typ) :

63 ns

Vgs(th) (Max) @ Id :

4V @ 250µA