AUIRF7319QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4mm

FET Feature :

Logic Level Gate

Length :

5mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

30A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Number of Elements :

2

Continuous Drain Current (ID) :

4.9A

REACH SVHC :

No SVHC

Power Dissipation :

2W

Series :

HEXFET®

Element Configuration :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

1 V

Number of Pins :

8

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

6.5A 4.9A

FET Type :

N and P-Channel

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6.5A

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Threshold Voltage :

1V

Number of Terminations :

8

Max Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Published :

2011

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

26 Weeks