AUIRF3504

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

REACH SVHC :

No SVHC

Number of Pins :

3

Height :

16.51mm

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Width :

4.82mm

Power Dissipation :

143W

Turn On Delay Time :

9.9 ns

Case Connection :

DRAIN

Published :

2011

Fall Time (Typ) :

29 ns

Series :

HEXFET®

Rise Time :

61ns

Nominal Vgs :

2 V

Length :

10.66mm

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 25V

Mount :

Through Hole

Contact Plating :

Tin

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 100µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

87A

Vgs (Max) :

±20V

Threshold Voltage :

2V

Turn-Off Delay Time :

24 ns

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0092Ohm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 52A, 10V

Power Dissipation-Max :

143W Tc

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

40V