AUIRF1018ES
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- Mfr.Part #
- AUIRF1018ES
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 79A D2PAK
- Stock
- 7,484
- In Stock ：
- 7,484
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 35ns
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 79A
- Drain to Source Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2290pF @ 50V
- Power Dissipation :
- 110W
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Width :
- 9.65mm
- Fall Time (Typ) :
- 46 ns
- Length :
- 10.67mm
- Published :
- 2011
- Element Configuration :
- Single
- Contact Plating :
- Lead, Tin
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 47A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 79A Tc
- Turn-Off Delay Time :
- 55 ns
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Avalanche Energy Rating (Eas) :
- 88 mJ
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 110W Tc
- Number of Terminations :
- 2
- Height :
- 4.83mm
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 13 ns
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- AUIRF1018ES
N-Channel Tube 8.4m Ω @ 47A, 10V ±20V 2290pF @ 50V 69nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF1018ES Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 88 mJ.A device's maximum input capacitance is 2290pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 79A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
AUIRF1018ES Features
the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
AUIRF1018ES Applications
There are a lot of Infineon Technologies
AUIRF1018ES applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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