APTM50DUM25TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SP4

Drain-source On Resistance-Max :

0.025Ohm

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

29600pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

25m Ω @ 74.5A, 10V

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Mount :

Chassis Mount

Max Power Dissipation :

1.25kW

Packaging :

Bulk

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Pin Count :

15

Power - Max :

1250W

Number of Pins :

4

FET Feature :

Standard

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Avalanche Energy Rating (Eas) :

1300 mJ

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

300A

Terminal Form :

UNSPECIFIED

Qualification Status :

Not Qualified

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs :

1200nC @ 10V

Mounting Type :

Chassis Mount

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-XUFM-X15

JESD-609 Code :

e1

Pbfree Code :

yes

Configuration :

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Continuous Drain Current (ID) :

149A

Number of Terminations :

15

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED