APTM50AM19STG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-40°C~150°C TJ

FET Type :

2 N-Channel (Half Bridge)

Power - Max :

1250W

Gate Charge (Qg) (Max) @ Vgs :

492nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

170A

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

22400pF @ 25V

Max Power Dissipation :

1.25kW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 10mA

Input Capacitance :

22.4nF

Continuous Drain Current (ID) :

170A

FET Feature :

Silicon Carbide (SiC)

Mount :

Chassis Mount

Rds On (Max) @ Id, Vgs :

19mOhm @ 85A, 10V

Number of Pins :

4

Published :

2004

Max Operating Temperature :

150°C

Rds On Max :

19 mΩ

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

500V

Package / Case :

SP4

Min Operating Temperature :

-40°C

RoHS Status :

RoHS Compliant

Supplier Device Package :

SP4