APTGV100H60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Configuration :

Full Bridge Inverter

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Case Connection :

Isolated

Qualification Status :

Not Qualified

Max Collector Current :

150A

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

600V

NTC Thermistor :

yes

Terminal Finish :

TIN SILVER COPPER

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Operating Temperature (Max) :

150°C

Number of Terminations :

25

Number of Elements :

4

ECCN Code :

EAR99

IGBT Type :

NPT, Trench Field Stop

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 100A

JESD-30 Code :

R-XUFM-X25

Gate-Emitter Voltage-Max :

20V

Published :

2007

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

340W

Input :

Standard

Turn On Time :

180 ns

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

Input Capacitance (Cies) @ Vce :

6.1nF @ 25V

Input Capacitance :

6.1nF

Package / Case :

SP3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

340W

Pin Count :

25

Turn Off Time-Nom (toff) :

370 ns

Current - Collector Cutoff (Max) :

250μA

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

1.9V