APTC80H29SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Chassis Mount, Screw

Power Dissipation :

156W

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Pin Count :

14

Number of Pins :

4

Turn On Delay Time :

10 ns

FET Feature :

Standard

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Radiation Hardening :

No

Turn-Off Delay Time :

83 ns

FET Type :

4 N-Channel (H-Bridge)

Transistor Application :

SWITCHING

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Input Capacitance (Ciss) (Max) @ Vds :

2254pF @ 25V

DS Breakdown Voltage-Min :

800V

Terminal Position :

UPPER

Terminal Finish :

TIN SILVER COPPER

Continuous Drain Current (ID) :

15A

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Drain to Source Voltage (Vdss) :

800V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

35 ns

Number of Terminations :

14

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Package / Case :

SP4

Drain-source On Resistance-Max :

0.29Ohm

Number of Elements :

4

Case Connection :

Isolated

Rise Time :

13ns

Pbfree Code :

yes

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

156W

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

670 mJ

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.5A, 10V

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED