ALD111933MAL
- Mfr.Part #
- ALD111933MAL
- Manufacturer
- Advanced Linear Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 10.6V 8MSOP
- Stock
- 17,438
- In Stock :
- 17,438
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- Manufacturer :
- Advanced Linear Devices, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Number of Elements :
- 2
- Number of Terminations :
- 8
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Rds On (Max) @ Id, Vgs :
- 500 Ω @ 5.9V
- FET Feature :
- Standard
- Series :
- EPAD®
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Operating Temperature :
- 0°C~70°C TJ
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Factory Lead Time :
- 10 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- 2 N-Channel (Dual) Matched Pair
- Transistor Element Material :
- SILICON
- Element Configuration :
- Dual
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 10.6V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 6.9mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 3.35V @ 1μA
- JESD-30 Code :
- R-PDSO-G8
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.5pF @ 5V
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 10V
- Turn-Off Delay Time :
- 10 ns
- Max Power Dissipation :
- 500mW
- Power Dissipation :
- 500mW
- Datasheets
- ALD111933MAL

ALD111933MAL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Advanced Linear Devices Inc. stock available at
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