2STL2580-AP
- Mfr.Part #
- 2STL2580-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92MOD
- Stock
- 37,916
- In Stock :
- 37,916
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 400V
- Base Part Number :
- 2STL
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 250mA 5V
- Transistor Type :
- NPN
- Power - Max :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 9V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Mount :
- Through Hole
- Datasheets
- 2STL2580-AP
NPN 150°C TJ 10μA ICBO NPN TO-226-3, TO-92-3 Long Body Through Hole
2STL2580-AP Overview
In this device, the DC current gain is 60 @ 250mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 1A volts.
2STL2580-AP Features
the DC current gain for this device is 60 @ 250mA 5V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 9V
2STL2580-AP Applications
There are a lot of STMicroelectronics
2STL2580-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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