2SK3313(Q)
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- Mfr.Part #
- 2SK3313(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO220NIS
- Stock
- 37,915
- In Stock ：
- 37,915
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 40W Tc
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Resistance :
- 620mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220NIS
- Rds On Max :
- 620 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2040pF @ 10V
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 40W
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 620mOhm @ 6A, 10V
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 12A
- Published :
- 1999
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drain to Source Resistance :
- 500MOhm
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 2.04nF
- Datasheets
- 2SK3313(Q)
N-Channel Bulk 620mOhm @ 6A, 10V ±30V 2040pF @ 10V 45nC @ 10V 500V TO-220-3 Full Pack
2SK3313(Q) Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2040pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 500mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
2SK3313(Q) Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
single MOSFETs transistor is 500mOhm
a 500V drain to source voltage (Vdss)
2SK3313(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SK3313(Q) applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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