2SK3309(Q)
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- Mfr.Part #
- 2SK3309(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 10A TO220FL
- Stock
- 20,525
- In Stock ：
- 20,525
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2009
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Drain to Source Breakdown Voltage :
- 450V
- Resistance :
- 480mOhm
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 10A
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 5A, 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 65W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3, Short Tab
- Rise Time :
- 25ns
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 65W
- Mount :
- Through Hole
- Datasheets
- 2SK3309(Q)
.JPG)
N-Channel Tube 650m Ω @ 5A, 10V ±30V 920pF @ 10V 23nC @ 10V TO-220-3, Short Tab
2SK3309(Q) Overview
A device's maximum input capacitance is 920pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=450V, and this device has a drain-to-source breakdown voltage of 450V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK3309(Q) Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 450V voltage
2SK3309(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SK3309(Q) applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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