2SK2544(F)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

6A

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Drain to Source Resistance :

1.25Ohm

Mounting Type :

Through Hole

Rds On Max :

1.25 Ω

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

1.3nF

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

FET Type :

N-Channel

Max Operating Temperature :

150°C

Operating Temperature :

150°C TJ

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

80W Tc

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

25ns

Power Dissipation :

80W

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

40 ns

Drain to Source Voltage (Vdss) :

600V

Drain to Source Breakdown Voltage :

600V

Supplier Device Package :

TO-220AB

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.25Ohm @ 3A, 10V

Vgs (Max) :

±30V

Element Configuration :

Single