2SC5171(LBS2MATQ,M
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- Mfr.Part #
- 2SC5171(LBS2MATQ,M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 180V 2A TO220NIS
- Stock
- 40,755
- In Stock ：
- 40,755
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 180V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Frequency - Transition :
- 200MHz
- Published :
- 2007
- Packaging :
- Bulk
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Power - Max :
- 2W
- Supplier Device Package :
- TO-220NIS
- Current - Collector (Ic) (Max) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Datasheets
- 2SC5171(LBS2MATQ,M
NPN 150°C TJ 5μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SC5171(LBS2MATQ,M Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 100mA, 1A means Ic has reached its maximum value(saturated).Product package TO-220NIS comes from the supplier.Collector Emitter Breakdown occurs at 180VV - Maximum voltage.
2SC5171(LBS2MATQ,M Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220NIS
2SC5171(LBS2MATQ,M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5171(LBS2MATQ,M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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