2SA965-Y,T6F(J
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- Mfr.Part #
- 2SA965-Y,T6F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A TO92MOD
- Stock
- 37,126
- In Stock ：
- 37,126
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 800mA
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 100mA 5V
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 120MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 900mW
- Datasheets
- 2SA965-Y,T6F(J
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA965-Y,T6F(J Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Device displays Collector Emitter Breakdown (120V maximal voltage).
2SA965-Y,T6F(J Features
the DC current gain for this device is 80 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
2SA965-Y,T6F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SA965-Y,T6F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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