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  5. 2N4410_D75Z
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    2N4410_D75Z

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    Mfr.Part #
    2N4410_D75Z
    Manufacturer
    onsemi
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheet
    Download
    Description
    TRANS NPN 80V 0.2A TO92-3
    Stock
    27,881
    In Stock ：
    27,881

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Voltage - Collector Emitter Breakdown (Max) :
    80V
    Base Part Number :
    2N4410
    Transistor Type :
    NPN
    Packaging :
    Tape and Box (TB)
    Current - Collector Cutoff (Max) :
    10nA ICBO
    Power - Max :
    625mW
    Operating Temperature :
    -55°C~150°C TJ
    Vce Saturation (Max) @ Ib, Ic :
    200mV @ 100μA, 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    60 @ 10mA 1V
    Current - Collector (Ic) (Max) :
    200mA
    Package / Case :
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Mounting Type :
    Through Hole
    Datasheets
    2N4410_D75Z
    Introducing Transistors - Bipolar (BJT) - Single onsemi 2N4410_D75Z from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number：2N4410, Operating Temperature：-55°C~150°C TJ, Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type：Through Hole, 2N4410_D75Z pinout, 2N4410_D75Z datasheet PDF, 2N4410_D75Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N4410_D75Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi 2N4410_D75Z


    NPN -55°C~150°C TJ 10nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

    2N4410_D75Z Overview


    The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 100μA, 1mA.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.

    2N4410_D75Z Features


    the DC current gain for this device is 60 @ 10mA 1V
    the vce saturation(Max) is 200mV @ 100μA, 1mA


    2N4410_D75Z Applications


    There are a lot of ON Semiconductor
    2N4410_D75Z applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting
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