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  4. Transistors - Bipolar (BJT) - Single
  5. 2N4410_D74Z
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    2N4410_D74Z

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    Mfr.Part #
    2N4410_D74Z
    Manufacturer
    onsemi
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheet
    Download
    Description
    TRANS NPN 80V 0.2A TO92-3
    Stock
    30,175
    In Stock ：
    30,175

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    60 @ 10mA 1V
    Mounting Type :
    Through Hole
    Current - Collector (Ic) (Max) :
    200mA
    Voltage - Collector Emitter Breakdown (Max) :
    80V
    Operating Temperature :
    -55°C~150°C TJ
    Base Part Number :
    2N4410
    Current - Collector Cutoff (Max) :
    10nA ICBO
    Power - Max :
    625mW
    Packaging :
    Tape and Box (TB)
    Vce Saturation (Max) @ Ib, Ic :
    200mV @ 100μA, 1mA
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Transistor Type :
    NPN
    Package / Case :
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheets
    2N4410_D74Z
    Introducing Transistors - Bipolar (BJT) - Single onsemi 2N4410_D74Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type：Through Hole, Operating Temperature：-55°C~150°C TJ, Base Part Number：2N4410, Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), 2N4410_D74Z pinout, 2N4410_D74Z datasheet PDF, 2N4410_D74Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N4410_D74Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi 2N4410_D74Z


    NPN -55°C~150°C TJ 10nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

    2N4410_D74Z Overview


    In this device, the DC current gain is 60 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100μA, 1mA.The device exhibits a collector-emitter breakdown at 80V.

    2N4410_D74Z Features


    the DC current gain for this device is 60 @ 10mA 1V
    the vce saturation(Max) is 200mV @ 100μA, 1mA


    2N4410_D74Z Applications


    There are a lot of ON Semiconductor
    2N4410_D74Z applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting
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