25P06

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3384 pF @ 30 V

Vgs(th) (Max) @ Id :

3.5V @ 250uA

Continuous Drain Current (Id) @ 25°C :

25A Tc

Power Dissipation-Max (Ta=25°C) :

90W Tc

Current - Continuous Drain (Id) @ 25°C :

25A (Tc)

Package / Case :

TO-252-2(DPAK)

Power Dissipation (Max) :

100W (Tc)

Vgs (Max) :

±20V

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

37 nC @ 10 V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Product Status :

Active

Rds On (Max) @ Id, Vgs :

45mΩ @ 20A,10V

FET Type :

P Channel

RoHS Status :

RoHS Compliant

Series :

-

Supplier Device Package :

TO-252

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

60V

Technology :

MOSFET (Metal Oxide)